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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4510 DESCRIPTION With TO-3PML package High voltage ,high speed switching Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertors Solid state relay General purpose power amplifiers PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 500 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 10 15 5 TC=25ae 80 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3PML) and symbol UNIT V V V A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4510 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA; IE=0 IC=0.2A; IB=0 IE=1mA; IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=450V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 25 MIN 500 400 10 0.8 1.2 100 100 65 |I |I TYP. MAX UNIT V V V V V A A SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Switching times ton tstg tf TOR NDU ICO E SEM ANG INCH Turn-on time 1.0 Storage time Fall time IC=7.5A;RL=20| IB1=0.75A; IB2=-1.5A Pw = 20|I s; DutyU 2% 2.5 0.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4510 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4510 TOR NDU ICO E SEM ANG INCH 4 |
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